1. This site uses cookies. You do not need to reset your password if you login via Athens or an Institutional login. Form and we will follow up with your librarian or Institution on your behalf. In order to study the infrared absorption characteristics of hydrogenated amorphous silicon nitride (a-SiNx:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) of a-SiNx:H films is investigated in the spectrum from 714 to 1250 cm−1. 18 085001, https://doi.org/10.1088/0960-1317/18/8/085001. 258 0 obj <> endobj Quantum information science is rapidly developing relying on generation of quantum states of light via emission from quantum dots, Different types of material nonlinearities in Si enable frequency conversion via, Here, we report on the study of linear (thermo-optic) and nonlinear, II. Export citation and abstract m and N are the basic parameters responsible for depositing silicon nitride. The computer you are using is not registered by an institution with a subscription to this article. The results show that the enhanced HF power and substrate temperature are the most important parameters for increasing the EC of the film, and increased NH3/SiH4 gas flow ratio is the key to the blueshift of peak wave number. RIS. If you have a user account, you will need to reset your password the next time you login. The SEM studies revealed that films deposited at a higher value of J had highly condensed structure. Find out more about journal subscriptions at your site. The device under test is an integrated racetrack resonator in the All-Pass filter configuration. DETERMINATION OF THE NONLINEAR REFRACTIVE INDEX, The nonlinear refractive index is determined from the efficiency, Stimulated FWM is performed by tuning the pump and the idler laser frequencies. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride, Appl. Journal of Micromechanics and Microengineering, https://doi.org/10.1016/j.optmat.2010.01.032. References. The experimental set-up used to determine the, III. ScienceDirect ® is a registered trademark of Elsevier B.V. ScienceDirect ® is a registered trademark of Elsevier B.V. Optical and structural properties of silicon nitride thin films prepared by ion-assisted deposition. Journal of Micromechanics and Microengineering, The results were verified by comparison of the theo-retical curves with experimental measurements. Volume 18, Nevertheless, no precursor of Si-N is reported to be present within the plasma [2] [3]. The effects of N-ion current density (J) on the structural and optical properties of SiNx thin films were investigated. To sign up for alerts, please log in first. To find out more, see our, Browse more than 100 science journal titles, Read the very best research published in IOP journals, Read open access proceedings from science conferences worldwide, "Gleb Wataghin" Institute of Physics – University of Campinas (UNICAMP), Journal of Micromechanics and Microengineering. M. Fadel, M. Bülters, M. Niemand, E. Voges, and P. M. Krummrich, “, Low-loss and low-birefringence high-contrast silicon-oxynitride waveguides for optical communication, 14. Number 8, 1 Graduate School of Chinese Academy of Sciences, Beijing 100049, People's Republic of China, 2 State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China, Received 14 March 2008 Opt. Parts are pressed and sintered by well developed methods to produce a ceramic with a unique set of outstanding properties. Silicon nitride is a man made compound synthesized through several different chemical reaction methods. If you need an account, please register here. Please choose one of the options below. L. Stefan, M. Bernard, R. Guider, G. Pucker, L. Pavesi, and M. Ghulinyan, “, Ultra-high-Q thin-silicon nitride strip-loaded ring resonators, 19. BibTeX In HFCVD, reactant gases are flowed over a heated filament to form precursor species which subsequently im- pinge on the substrate surface, resulting in the deposition of high quality films. This site uses cookies. k��ڵ~����Ox���b�p� �y��[�ot��m��5�-n�0:�Ϯ��C�w�*~ ��� To gain access to this content, please complete the Recommendation By continuing you agree to the use of cookies. The thermo-optic coefficient results to be. &�6�āőD�o�E�z��z�����{A�d+�d��eX}������ R���������q"�|�M�g`,� This research was supported by Provincia Autonoma di Trento with the SiQuro project and by MIUR with the PRIN project NEMO 2015KEZNYM. Microeng. 299 0 obj <>/Filter/FlateDecode/ID[<86DFF16EE2E1B5469274DDF44C4916AB><6F4DBBF9A19FC2498244C3630C6F5061>]/Index[258 87]/Info 257 0 R/Length 166/Prev 925266/Root 259 0 R/Size 345/Type/XRef/W[1 3 1]>>stream Published 26 June 2008, Xu Yan et al 2008 J. Micromech. Purchase this article from our trusted document delivery partners. T. Capelle, Y. Tsaturyan, A. Barg, and A. Schliesser, “, Polarimetric analysis of stress anisotropy in nanomechanical silicon nitride resonators, 26. N. C. Harris, G. R. Steinbrecher, M. Prabhu, Y. Lahini, J. Mower, D. Bunandar, C. Chen, F. N. Wong, T. Baehr-Jones, M. Hochberg, Quantum transport simulations in a programmable nanophotonic processor, 9. Finally, the adjusted process parameters of a-SiNx:H film for application in an infrared focal plane array are selected: SiH4:NH3:N2 = 2:3:100, HF power: 45 W, LF power: 35 W, pulse time: HF/LF pulse time = 0.6, temperature: 350 and pressure: 650 mTorr. A. Gentile, R. Santagati, J. Wang, N. Wiebe, D. P. Tew, J. L. O’Brien, and M. G. Thompson, “, M. Borghi, C. Castellan, S. Signorini, A. Trenti, and L. Pavesi, “, C. Castellan, A. Trenti, M. Mancinelli, A. Marchesini, M. Ghulinyan, G. Pucker, and L. Pavesi, “, N. C. Harris, G. R. Steinbrecher, M. Prabhu, Y. Lahini, J. Mower, D. Bunandar, C. Chen, F. N. Wong, T. Baehr-Jones, M. Hochberg, M. Mancinelli, A. Trenti, S. Piccione, G. Fontana, J. S. Dam, P. Tidemand-Lichtenberg, C. Pedersen, and L. Pavesi, “, A. D. Ludlow, M. M. Boyd, J. Ye, E. Peik, and P. O. Schmidt, “, A. Gondarenko, J. S. Levy, and M. Lipson, “, M. Kues, C. Reimer, P. Roztocki, L. R. Cortés, S. Sciara, B. Wetzel, Y. Zhang, A. Cino, S. T. Chu, B. E. Little, M. Fadel, M. Bülters, M. Niemand, E. Voges, and P. M. Krummrich, “, D. J. Moss, R. Morandotti, A. L. Gaeta, and M. Lipson, “, K. Luke, A. Dutt, C. B. Poitras, and M. Lipson, “, L. Stefan, M. Bernard, R. Guider, G. Pucker, L. Pavesi, and M. Ghulinyan, “, M. Masi, R. Orobtchouk, G. Fan, J.-M. Fedeli, and L. Pavesi, “, D. E. Bossi, J. M. Hammer, and J. M. Shaw, “, P.-É. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature. A. D. Ludlow, M. M. Boyd, J. Ye, E. Peik, and P. O. Schmidt, “, 11. We would like to thank Dr. Martino Bernard, Mr. Niccoló Carlino and Dr. Fabio Turri for the preliminar passive characterization of the devices. We used a C-band tunable Continuous Wave laser (CW), fiber coupled to a polarization controller, which is butt-coupled to the waveguides by means of tapered lensed fibers using a piezoelectric positioning stage.
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